reflective sensor hoa1180 description features choice of phototransistor or photodarlington output high sensitivity wide operating temperature range (-55?c?to?+100?c) 12.0 in.(305 mm) min. 28 awg pvc insulated wire leads the hoa1180 series consists of an infrared emitting diode and an npn silicon phototransistor (hoa1180-001, -002) or photodarlington (HOA1180-003), encased side-by-side on converging optical axes in a black thermoplastic housing. the detector responds to radiation from the ired only when a reflective object passes within its field of view. the hoa1180 series employs metal can packaged components. for additional component information see se1450, sd1440, and sd1410. housing material is polyester. housings are soluble in chlorinated hydrocarbons and ketones. recommended cleaning agents are methanol and isopropanol. wire color code and functions are: all devices ired anode - red ired cathode - black hoa1180-001 collector - brown emitter - black hoa1180-002 collector - orange emitter - black HOA1180-003 collector - yellow emitter - black .625(15.88) .450(11.43) .50(12.7) 12.0(304.8) min .150(3.81) .187(4.75) .062(1.60)r 2 plcs .070(1.78) .250(6.35) .250(6.35 .040(1.02) test surface dim_035.ds4 infra-24.tif outline dimensions in inches (mm) 3 plc decimals 0.010(0.25) tolerance 2 plc decimals 0.020(0.51) honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 236
reflective sensor hoa1180 electrical characteristics units test conditions min parameter symbol typ max ir emitter detector coupled characteristics absolute maximum ratings (25?c free-air temperature unless otherwise noted) operating temperature range -55?c to 100?c storage temperature range -55?c to 125?c soldering temperature (5 sec) 240?c ir emitter power dissipation 75 mw [] reverse voltage 3 v continuous forward current 50 ma detector trans. darlington collector-emitter voltage 30 v 15 v emitter-collector voltage 5 v 5 v power dissipation 75 mw [] 75 mw [] collector dc current 30 ma 30 ma schematic honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 237
reflective sensor hoa1180 ired forward bias characteristics gra_073.ds4 forward voltage - v f o r w a r d c u r r e n t - m a 0 10 20 30 40 50 60 70 80 90 100 0.8 1.0 1.2 1.4 1.6 1.8 2.0 pulsed condition t a = 80c t a = -40c t a = 25c fig. 1 non-saturated switching time vs load resistance gra_079.ds4 load resistance - ohms r e s p o n s e t i m e - s 1 10 100 1000 10 100 1000 10000 phototransistor photodarlington fig. 2 dark current vs temperature gra_303.cdr fig. 3 collector current vs ambient temperature gra_076.ds4 free-air temperature - c n o r m a l i z e d c o l l e c t o r c u r r e n t 0.0 0.6 1.2 -50 0.4 0.2 0.8 1.0 -25 0 25 50 100 75 fig. 4 collector current vs distance to reflective surface gra_084.ds4 distance to reflective surface - inches n o r m a l i z e d c o l l e c t o r c u r r e n t 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.00 0.10 0.20 0.30 0.40 0.50 0.60 i f = 30 ma v ce = 5.0 v fig. 5 collector current vs ired forward current gra_085.ds4 ired forward current - ma? n o r m a l i z e d c o l l e c t o r c u r r e n t 0.00 0.20 0.40 0.60 0.80 1.20 1.40 1.60 1.80 1.00 0 10 20 30 40 50 v ce = 5 v d = 0.5 in. fig. 6 all performance curves show typical values honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 238
reflective sensor hoa1180 honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 239
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